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Freescale Semiconductor Technical Data
MW4IC001MR4 Rev. 3, 1/2005
RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. * Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power -- 900 mW PEP Power Gain -- 13 dB Efficiency -- 38% * High Gain, High Efficiency and High Linearity * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * N Suffix Indicates Lead - Free Terminations * In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MW4IC001NR4 MW4IC001MR4
800 - 2170 MHz, 900 mW, 28 V W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 4.58 0.037 - 65 to +150 150 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case @ 85C Symbol RJC Value 27.3 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 0 (Minimum) M1 (Minimum) C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MW4IC001NR4 MW4IC001MR4 1
RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 V, ID = 50 A) Gate Quiescent Voltage (VDS = 28 V, ID = 10 mA) Drain - Source On - Voltage (VGS = 10 V, ID = 0.05 A) Forward Transconductance (VDS = 10 V, ID = 0.1 A) Dynamic Characteristics Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 12 mA, f = 2170 MHz) Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Gps -- 13 -- dB Coss Crss -- -- 45 0.62 -- -- pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.7 0.48 0.05 5 5 0.9 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 10 1 Adc Adc Adc Symbol Min Typ Max Unit
D
--
29
--
%
IMD
--
- 28
--
dBc
IRL
--
- 18
--
dB
P1dB Gps D IRL
-- 12 35 - 10
0.85 13 38 - 16
-- -- -- --
W dB % dB
MW4IC001NR4 MW4IC001MR4 2 RF Device Data Freescale Semiconductor
VGG C1 C2 Z6 C7 Z7 R1 RF INPUT DUT Z1 C9 C3 C10 Z2 L1 C4 Z3 Z4 R2 Z5 Z8 L2 Z9 Z10 Z11 C5 C11 Z12 Z13 C13 RF OUTPUT C6 VDD + C8
C12
Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8
1.331 0.126 0.065 0.065 0.680 1.915 0.120
x 0.044 x 0.076 x 0.175 x 0.195 x 0.145 x 0.055 x 0.141
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 PCB
0.062 x 0.044 to 0.615 Taper 0.082 x 0.615 Microstrip 0.075 x 0.044 Microstrip 0.625 x 0.044 Microstrip 1.375 x 0.044 Microstrip Rogers RO4350, 0.020, r = 3.5
Figure 1. MW4IC001NR4(MR4) 900 MHz Test Circuit Schematic
Table 6. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Designations and Values
Part C1, C6 C2, C3, C5, C7 C4 C8 C9 C10, C11 C12 C13 L1 L2 R1 R2 Description 0.1 F, 100 V Chip Capacitors 43 pF, 500 V Chip Capacitors 12 pF, 500 V Chip Capacitor 22 F, 35 V Tantalum Chip Capacitor 4.7 pF, 500 V Chip Capacitor 0.6 - 4.5 pF, 500 V Variable Capacitors 2.7 pF, 500 V Chip Capacitor 3.3 pF, 500 V Chip Capacitor 5.6 nH Chip Inductor 10 nH Chip Inductor 100 W Chip Resistor 20 W Chip Resistor Part Number C1210C104K5RACTR 100B430JP500X 100B120JP500X T491X226K035AS 100B4R7CP500X 27271SL 100B2R7CP500X 100B3R3CP500X 0805 Series 1008 Series CRCW12061001F100 CRCW120620R0F100 Manufacturer Kemet ATC ATC Kemet ATC Johanson ATC ATC AVX ATC Dale Dale
MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 3
VGG C1 C2
V DD C8 C6 C7
C9 C10
C3
R1 C4 L1 R2 L2 C5
C12 C11
C13
MW4IC001MR4 900 MHz Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Layout
MW4IC001NR4 MW4IC001MR4 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS - 900 MHz
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IRL 46 42 38 34 30 26 22 18 14 10 855 IM3 Gps VDS = 28 Vdc Pout = 0.9 W (PEP) IDQ = 14 mA Two -Tone Measurement 100 kHz Tone Spacing D IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 50 -15 -17 -19 -21 -23 -25 -27 -29 -31 -33 865 870 875 880 885 890 895 900 -35 905
860
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus Frequency
15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 6 0 0.2 0.4 0.6 0.8 1.0 VDS = 28 Vdc IDQ = 14 mA f = 880 MHz P1dB Gps
IMD, INTERMODULATION DISTORTION (dBc)
D
60 55 50 45 40 35 30 25 20 D, DRAIN EFFICIENCY (%)
-25 -30 IDQ = 8 mA -35 10 mA -40 -45 -50 -55 0.01 0.1 18 mA 16 mA 14 mA Two -Tone Measurement 100 kHz Tone Spacing 12 mA 1 10 VDS = 28 Vdc f1 = 880 MHz f2 = 880.1 MHz
1.2
15 1.4
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. CW Performance versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
-25 IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 -50 -55 -60 -65 7th Order -70 0.01 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP 5th Order Two -Tone Measurement 100 kHz Tone Spacing 3rd Order VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz f2 = 880.1 MHz IMD, INTERMODULATION DISTORTION (dBc)
-25
-30
-35
-40 10 MHz -45 1 MHz Tone Spacing = 100 kHz 0.1 VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz, f2 = f1 + Tone Spacing Two -Tone Measurement 1 10
-50 0.01
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Third Order Intermodulation Distortion versus Output Power MW4IC001NR4 MW4IC001MR4
RF Device Data Freescale Semiconductor
5
Z5 VGG + C1 C2 Z4 C4 Z11 R1 RF INPUT DUT Z1 C3 C7 Z2 Z3 Z6 Z7 C5 Z8 Z9 Z10 Z13 Z14 Z15 RF OUTPUT Z12 VDD + C6
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
1.018 0.495 0.893 1.340 0.912 0.241 0.076 0.294
x 0.044 x 0.296 x 0.500 x 0.022 x 0.022 x 0.500 x 0.150 x 0.150
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.067 x 0.264 Microstrip 0.457 x 0.492 Microstrip 0.719 x 0.022 Microstrip 1.149 x 0.022 Microstrip 0.677 x 0.434 Microstrip 0.095 x 0.264 Microstrip 0.772 x 0.044 Microstrip Rogers RO4350, 0.020, r = 3.5
Figure 8. MW4IC001NR4(MR4) 1990 MHz Test Circuit Schematic
Table 7. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Designations and Values
Part C1, C6 C2, C4 C3, C5 C7 R1 Description 22 F, 35 V Tantalum Capacitors 10 pF, 500 V Chip Capacitors 10 pF, 500 V Chip Capacitor 0.6 - 4.5 pF, 500 V Variable Capacitor 1 kW Chip Resistor Part Number T491X226K035AS 100B100JCA500X 600S100JW 27271SL CRCW12061021F100 Manufacturer Kemet ATC ATC Johanson Dale
VGG
C1 C2 R1 C3 C4
VDD
C6
C5
C7
MW4IC001MR4 1990 MHz Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 9. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Layout MW4IC001NR4 MW4IC001MR4 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS - 1990 MHz
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 1930 Gps IMD VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA Two-Tone Measurement, 100 kHz Tone Spacing IRL D -11 -14 -17 -20 -23 -26 -29 -32 -35 1990
1940
1950
1960
1970
1980
f1, FREQUENCY (MHz)
Figure 10. Two-Tone Performance versus Frequency
Gps D, DRAIN EFFICIENCY (%) 14.0 G ps , POWER GAIN (dB) 48
IMD, INTERMODULATION DISTORTION (dBc)
14.4
56
-30 IDQ = 20 mA -35 -40 -45 16 mA -50 -55 9.6 mA -60 0.01 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 12 mA VDD = 28 Vdc f1 = 1990 MHz, f2 = 1990.1 MHz Two -Tone Measurement 100 kHz Tone Spacing
13.6
40
13.2
P1dB VDD = 28 Vdc IDQ = 12 mA f = 1990 MHz 0.4 0.5 0.6 0.7 0.8 0.9 1.0
32
12.8 D 12.4 0.1 0.2 0.3
24 16 1.1 1.2 1.3
Pout, OUTPUT POWER (WATTS)
Figure 11. CW Performance versus Output Power
Figure 12. Intermodulation Distortion versus Output Power
-35 -40 -45 -50 -55 -60 -65 -70 -75 0.01 7th Order VDD = 28 Vdc IDQ = 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz Two-Tone Measurement, 100 kHz Tone Spacing 0.1 OUTPUT POWER (WATTS) PEP 1 3rd Order 5th Order
IMD, THIRD ORDER INTERMODULATION (dBc)
-30 IMD, INTERMODULATION DISTORTION (dBc)
-30 -35 -40 10 MHz -45 -50 -55 -60 0.01 100 kHz 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 MHz VDD = 28 Vdc IDQ = 12 mA f1 = 1990 MHz f2 = f1 + Tone Spacing Two -Tone Measurement 1
Figure 13. Intermodulation Distortion Products versus Output Power
Figure 14. Third Order Intermodulation Distortion versus Output Power MW4IC001NR4 MW4IC001MR4
RF Device Data Freescale Semiconductor
7
Z5 VGG + C1 C2 Z4 C4 Z11 R1 RF INPUT DUT Z1 C3 C7 Z2 Z3 Z6 Z7 C5 Z8 Z9 Z10 Z13 Z14 Z15 RF OUTPUT Z12 VDD + C6
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
1.267 0.058 0.758 1.073 1.361 0.205 0.109 0.210
x 0.044 x 0.044 x 0.256 x 0.022 x 0.022 x 0.332 x 0.150 x 0.150
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.106 x 0.344 Microstrip 0.783 x 0.500 Microstrip 0.847 x 0.022 Microstrip 1.055 x 0.022 Microstrip 0.291 x 0.387 Microstrip 0.050 x 0.287 Microstrip 0.950 x 0.044 Microstrip Rogers RO4350, 0.020, r = 3.5
Figure 15. MW4IC001NR4(MR4) 2170 MHz Test Circuit Schematic Table 8. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Designations and Values
Part C1, C6 C2, C4 C3, C5 C7 R1 Description 22 F, 35 V Tantalum Capacitors 10 pF, 500 V Chip Capacitors 10 pF, 500 V Chip Capacitor 0.6 - 4.5 pF, 500 V Variable Capacitor 1 kW Chip Resistor Part Number T491X226K035AS 100B100JCA500X 600S100JW 27271SL CRCW12061021F100 Manufacturer Kemet ATC ATC Johanson Dale
VGG
C1 C2 R1 C4
VDD
C6
C5 C3 C7
MW4IC001MR4 2170 MHz Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 16. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Layout MW4IC001NR4 MW4IC001MR4 8 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS - 2170 MHz
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
32 IRL D
-13
27
22
VDD = 28 Vdc Pout = 0.9 W (PEP) IDQ = 12 mA Two-Tone Measurement, 100 kHz Tone Spacing
-18
-23
17
IMD Gps
-28
12 2110
2120
2130
2140
2150
2160
-33 2170
f, FREQUENCY (MHz)
Figure 17. Two-Tone Performance versus Frequency
13.8 13.4 G ps , POWER GAIN (dB) 13.0 12.6 12.2 11.8 11.4 D P1dB VDD = 28 Vdc IDQ = 12mA f = 2170 MHz Gps 60 50 40 30 20 10 D, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 -45
VDD = 28 Vdc f1 = 2170 MHz, f2 = 2170.1 MHz Two-Tone Measurement 100 kHz Tone Spacing IDQ = 7.2 mA 20 mA
IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc)
16 mA
9.6 mA -50 0.01
12 mA 0.1 1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 18. CW Performance versus Output Power
Figure 19. Intermodulation Distortion versus Output Power
IMD,THIRD ORDER INTERMODULATION (dBc)
-20 IMD, INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 7th Order 5th Order 3rd Order VDD = 28 Vdc, IDQ = 12 mA, f1 = 2170 MHz, f2 = 2170.1 MHz Two-Tone Measurement, 100 kHz Tone Spacing
-20 VDD = 28 Vdc IDQ = 12 mA f1 = 2170 MHz f2 = f1 + Tone Spacing Two -Tone Measurement
-25
-30
-35
1 MHz
10 MHz
-40 -45 0.01 100 kHz 0.1 Pout, OUTPUT POWER (WATTS) PEP 1
0.01
0.1 Pout, OUTPUT POWER (WATTS) PEP
1
Figure 20. Intermodulation Distortion Products versus Output Power
Figure 21. Third Order Intermodulation Distortion versus Output Power MW4IC001NR4 MW4IC001MR4
RF Device Data Freescale Semiconductor
9
f = 860 MHz Zload f = 900 MHz
Zo = 50
Zsource f =860 MHz
f = 900 MHz
VDD = 28 V, IDQ = 14 mA, Pout = 0.9 W PEP f MHz 860 865 870 875 880 885 890 895 900 Zsource 27.853 + j5.908 28.617 + j6.078 29.458 + j6.285 30.306 + j6.422 31.223 + j6.567 32.194 + j6.660 33.228 + j6.656 34.293 + j6.624 35.424 + j6.508 Zload 15.492 + j63.669 15.592 + j68.687 15.788 + j69.799 15.835 + j70.863 15.975 + j71.920 16.094 + j73.091 16.286 + j74.159 16.344 + j75.236 16.628 + j76.283
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance MW4IC001NR4 MW4IC001MR4 10 RF Device Data Freescale Semiconductor
f = 1920 MHz
Zload f = 2100 MHz f = 2000 MHz
f = 2180 MHz
Zload f = 2180 MHz f = 2100 MHz Zsource Zo = 50
f = 2000 MHz f = 1920 MHz Zsource
Zo = 50
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP f MHz 1920 1930 1940 1950 1960 1970 1980 1990 2000 Zsource 4.238 + j15.142 4.322 + j15.362 4.490 + j15.466 4.605 + j15.711 4.752 + j15.904 4.905 + j16.050 5.071 + j16.236 5.262 + j16.446 5.487 + j16.632 Zload 7.764 + j28.829 8.056 + j29.352 8.436 + j29.727 8.809 + j30.249 9.183 + j30.763 9.598 + j31.213 10.030 + j31.690 10.546 + j32.237 11.054 + j32.726 f MHz 2100 2110 2120 2130 2140 2150 2160 2170 2180
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP Zsource 2.667 + j12.903 2.671 + j13.070 2.664 + j13.224 2.694 + j13.431 2.703 + j13.511 2.702 + j13.700 2.745 + j13.952 2.754 + j14.026 2.784 + j14.206 Zload 5.892 + j26.374 6.092 + j26.739 6.281 + j27.094 6.540 + j27.510 6.748 + j27.795 6.996 + j28.182 7.300 + j28.678 7.562 + j28.987 7.862 + j29.411
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Z
source
Z
load
Figure 23. Series Equivalent Source and Load Impedance MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 11
NOTES
MW4IC001NR4 MW4IC001MR4 12 RF Device Data Freescale Semiconductor
NOTES
MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 13
NOTES
MW4IC001NR4 MW4IC001MR4 14 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A F
3
B
D
1
2
R
L
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X.
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _
U H
4
10_DRAFT
P C
Y
Y
E
ZONE W
1
2
3
G
S
STYLE 1: PIN 1. 2. 3. 4.
DRAIN GATE SOURCE SOURCE
ZONE X
VIEW Y - Y
CASE 466 - 03 ISSUE C PLD- 1.5 PLASTIC
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X
INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010
MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
RF Device Data Freescale Semiconductor
EEEEEE EE EEEE EE EEEEEE EE EEEEEE EEEE EEEEEE EE
MW4IC001NR4 MW4IC001MR4 15
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MW4IC001NR4 MW4IC001MR4
Document Number: MW4IC001MR4 Rev. 3, 1/2005
16
RF Device Data Freescale Semiconductor

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